光子器件与集成技术

教育背景
2000.9-2004.7 西安交通大学 微电子 学士
工作简历
2010.4-至今 中科院微电子所先导中心，主要负责22nm HKMG gate last工艺、14-16nm FDSOI 工艺和硅基光电工艺的开发。
2004.7-2010.3 华润上华科技股份有限公司工艺整合部课长，主要负责0.18μm以上mixed mode、logic、BCD、power MOS等产品工艺开发。

1. B. Li, B. Tang, P. Zhang, J. Yu, X. Liu, and Z. Li, "Optimized fabrication of wafer-level Si waveguides based on 200-mm CMOS platform," Optik 172, 777-782 (2018).

2. Longda Zhou, Bo Tang, Hong Yang, Hao Xu, Yongliang Li, Eddy Simoen, Huaxiang Yin, Huilong Zhu, Chao Zhao, Wenwu Wang, Dapeng Chen and Tianchun Ye，“Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated pCMOSFETs”，International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2018.

3. Longda Zhou, Bo Tang, Hao Xu, Qianqian Liu, Hong Yang, Jing Zhang, Eddy Simoen, Huaxiang Yin, Huilong Zhu, Chao Zhao, Dapeng Chen and Wenwu Wang, “The Impact of Electron Tunneling on NBTI Degradation in Ultra- thin p-MOSFETs with Sub-1nm EOT”, ADMETA 2018.