工作经历
2018年10月–至今，中国科学院微电子研究所，研究员，博士生导师
2009年7月–2018年10月，中国科学院物理研究所，副研究员，博士生导师
2012年7月– 2014年2月，德国亚琛工业大学物理系（IA） 洪堡学者
2013年11月– 2014年1月，英国剑桥大学材料科学与冶金系，洪堡访问学者
2011年5月– 2012年4月，韩国首尔大学物理与天文系 博士后
2007年8月– 2009年6月，中国科学院物理研究所，博士后
2004年4月 – 2007年7月，中国科学院上海硅酸盐研究所，研究生/博士
围绕类脑计算领域的重要科学与技术问题，开展具有认知记忆的神经形态计算器件、集成、算法和系统研究，拓展其在大数据处理、物联网和人工智能系统中的应用，包括：
1）神经形态计算器件与集成技术
2）神经网络模型与深度学习算法
3）感算融合的人工智能感知系统
承担项目
科技创新2030重大项目“新一代人工智能”专项，2020AAA0109005，基于混合器件的神经形态计算架构及芯片研究，参与人，2020-2025
国家重点研发计划，2018YFA0701500，存算一体器件及其计算新架构，课题负责人，2019-2024
国家自然科学基金面上项目，61874138，基于层状氧化物材料的神经突触晶体管，负责人，2018-2021
国家自然科学基金面上项目，51671213，基于磁电耦合材料的新型信息存储器件研究，负责人，2016-2020
国家自然科学基金面上项目，11274363，金属/绝缘体随机混合体系阻变效应研究，负责人，2013-2016
国家自然科学基金青年项目，11004235，巨电致电阻效应中导电路径的形成与演变过程研究，负责人，2011-2013
国家自然科学基金重点项目，11134007，新型电致电阻材料的物理机制，参与，2013-2017
代表性工作（*通讯作者）：
1) Y. Li, J. K. Lu, D. S. Shang,* Q. Liu, S. Y. Wu, Z. H. Wu, X. M. Zhang, J. G. Yang, Z. R. Wang, H. B. Lv, M. Liu, Oxide-based electrolyte-gated transistors for spatiotemporal information processing, Adv. Mater. 2003018 (2020)
2) X. B. Bu, H. Xu, D. S. Shang,* Y. Li, H. B. Lv, Q. Liu, Ion-gated transistor: An enabler for sensing and computing integration, Adv. Intell. Syst. 2000156 (2020)
3) C. He, J. Tang, D. S. Shang (co-first), J. Tang, X. Xi, S. Wang, N. Li, Q. Zhang, J. K. Lu, Z. Wei, Q. Wang, C. Shen, J. Li, S. Shen, J. Shen, R. Yang, D. Shi, H. Wu, S. Wang, G. Zhang, Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing, ACS Appl. Mater. & Interface 12, 11945 (2020)
4) P. P. Lu, J. X. Shen, D. S. Shang, Y. Sun, Nonvolatile memory and artificial synapse based on the Cu/P(VDF-TrFE)/Ni organic memtranstor, ACS Appl. Mater. & Interface 12, 4673 (2020)
5) P. P. Lu, D. S. Shang,* C. S. Yang, Y. Sun, An organic synaptic transistor with Nafion electrolyte, J. Phys. D: Appl. Phys. 53, 485102 (2020)
6) Q. Luo, Y. Cheng, J. Yang, R. Cao, H. Ma, Y. Yang, R. Huang, W. Wei, Y. Zheng, T. Gong, J. Yu, X. Xu, P. Yuan, X. Li, L. Tai, H. Yu, D. S. Shang, Q. Liu, Q. Ren, H. Lv, M. Liu, A highly CMOS compatible hafnia-based ferroelectric diode, Nat. Commun. 11: 1391 (2020)
7) J. X. Shen, P. P. Lu, D. S. Shang, Y. Sun, Realization of complete Boolean logic functions using a single memtranstor, Phys. Rev. Applied 12, 054062 (2019)
8) P. P. Lu, J. X. Shen, D. S. Shang, Y. Sun, Artificial synaptic device based on a multiferroic heterostructure, J. Phys. D: Appl. Phys. 52, 465303 (2019)
9) R. Cao, B. Song, D. S. Shang, Y. Yang, Q. Luo, S. Wu, Y. Li, Y. Wang, H. Lv, Q. Liu, M. Liu, Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode, IEEE Electro. Dev. Lett. 40, 1744 (2019)
10) X. Zhao. X. Zhang, D. S. Shang, Z. Wu, X. Xiao, R. Chen, C. Tang, J. Liu, W. Li, H. Lv, C. Jiang, Q. Liu, M. Liu, IEEE Electro. Dev. Lett. 40 554 (2019)
11) C. S. Yang, D. S. Shang,* N. Liu, E. J. Fuller, S. Agrawal, A. A. Talin, Y. Q. Li, B. G. Shen, Y. Sun, All-solid-state synaptic transistor with ultralow conductance for neuromorphic computing, Adv. Func. Mater. 28, 1804170 (2018)
12) J. X. Shen, D. S. Shang,* Y. S. Chai, S. G. Wang, B. G. Shen, and Y. Sun, Mimic synaptic plasticity and neural network using memtranstors, Adv. Mater. 30, 1706717 (2018)
13) K. Zhai, D. S. Shang, Y. S. Chai, G. Li, J. W. Cai, B. G. Shen, and Y. Sun, Room-temperature nonvolatile memory based on a single-phase multiferroic hexaferrite, Adv. Func. Mater. 28, 1705771 (2018)
14) J. Z. Cong, K. Zhai, Y. S. Chai, D. S. Shang, D. D. Khalyavin, R. D. Johnson, D. P. Kozlenko, S. E. Kichanov, A. M. Abakumov, A. A. Tsirlin, L. Dubrovinsky, X. L. Xu, Z. G. Sheng, S. V. Ovsyannikov, Y. Sun, Spin-induced multiferroicity in the binary perovskite manganite Mn2O3, Nat. Commun. 9, 2996 (2018)
15) 尚大山*，孙阳，基于忆耦器实现神经突触可塑性和神经网络模拟，物理 47, 376 (2018)
16) 申见昕，尚大山*，孙阳，基于磁电耦合效应的基本电路元件和非易失性存储器，物理学报 67, 127501 (2018)
17) C. S. Yang, D. S. Shang,* N. Liu, G. Shi, X. Shen, R. C. Ru, Y. Q. Li, and Y. Sun, A synaptic transistor based on quasi-2D molybdenum oxide, Adv. Mater. 29, 1700906 (2017)
18) C. S. Yang, D. S. Shang,* Y. S. Chai, L. Q. Yan, B. G. Shen, and Y. Sun, Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells, Phys. Chem. Chem. Phys. 19, 4190 (2017) (back cover)
19) K. Zhai, Y. Wu, S. P. Shen, W. Tian, H. B. Cao, Y. S. Chai, B. C. Chakoumakos, D. S. Shang, L. Q. Yan, ans Y. Sun, Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites, Nat. Commun. 8:51 (2017)
20) J. X. Shen, D. S. Shang,* Y. S. Chai, Y. Wang, J. Z. Cong, S. P. Shen, L. Q. Yan, W. H. Wang, and Y. Sun, Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure, Phys. Rev. Applied 6, 064028 (2016)
21) P. P. Lu, D. S. Shang,* J. X. Shen, Y. S. Chai, C. S. Yang, K. Zhai, J. Z. Cong, S. P. Shen, and Y. Sun, Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures, Appl. Phys. Lett. 109, 252902 (2016)
22) C. S. Yang, D. S. Shang,* Y. S. Chai, L. Q. Yan, B. G. Shen, and Y. Sun, Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces, Phys. Chem. Chem. Phys. 18, 12466 (2016)
23) J. Shen, J. Cong, Y. Chai, D. S. Shang, S. Shen, K. Zhai, Y. Tian, and Y. Sun, Nonvolatile memory based on nonlinear magnetoelectric effects, Phys. Rev. Appl. 6, 021001 (2016)
24) S. P. Shen, J. C. Wu, J. D. Song, X. F. Sun, Y. F. Yang, Y. S. Chai, D. S. Shang, S. G. Wang, J. F. Scott, and Y. Sun, Quantum electric-dipole liquid on a triangular lattice, Nat. Commun. 7: 10569 (2016)
25) D. S. Shang,* S. Lee, and Y. Sun, Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment, Solid State Ionics 295, 1 (2016)
26) S. P. Shen, D. S. Shang,* Y. S. Chai, Y. Sun, Realization of a flux-driven memtranstor at room temperature, Chin. Phys. B 25, 027703 (2016)
27) D. S. Shang, Y. S. Chai, Z. X. Cao, J. Lu, and Y. Sun, Towards the Complete Relational Graph of Fundamental Circuit Elements, Chin. Phys. B 24, 068402 (2015) （本文荣获2018年度中国物理学会“最有影响力论文奖”一等奖）
28) D. S. Shang,* P. Li, T. Wang, E. Carria, J. Sun, B. Shen, T. Taubner, I. Valov, R. Waser, and M. Wuttig, Understanding the conductive channel evolution in Na:WO3-x-based planar devices, Nanoscale 7 6023 (2015)
29) D. S. Shang,* J. R. Sun, B. G. Shen, and M. Wuttig, Resistance switching in oxides with inhomogeneous conductivity, Chin. Phys. B 22, 067202 (2013) (Invited review)
30) L. L. Wei, D. S. Shang,* J. R. Sun, S. B. Lee, Z. G. Sun, and B. G. Shen, Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems, Nanotechnology 24, 325202 (2013)
31) D. S. Shang,* L. Shi, J. R. Sun, and B. G. Shen, Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials, J. Appl. Phys. 111, 053504 (2012).
32) D. S. Shang,* L. Shi, J. R. Sun, and B. G. Shen, Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films, Nanotechnology 22, 254008 (2011).
33) C. Y. Dong, D. S. Shang,* L. Shi, J. R. Sun, B. G. Shen, F. Zhu, R. W. Li, and W. Chen, Roles of silver oxide in the bipolar resistance switching devices with silver electrode, Appl. Phys. Lett. 98, 072107 (2011).
34) D. S. Shang,* L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, R. W. Li, and Y. G. Zhao, Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing, Appl. Phys. Lett. 96, 072103 (2010).
35) L. Shi, D. S. Shang,* J. R. Sun, and B. G. Shen, Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure, Phys. Status Solidi (Rapid Research Letters) 4, 344 (2010).
36) D. S. Shang, J. R. Sun, L. Shi, Z. H. Wang, J. Wang, and B. G. Shen, Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions, Appl. Phys. Lett. 94, 052105 (2009).
37) L. Shi, D. S. Shang,* J. R. Sun, and B. G. Shen, Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices, Appl. Phys. Express 2, 101602 (2009).
38) D. S. Shang,* Q. Wang, L. D. Chen, W. D. Yu, X. M. Li, J. R. Sun, and B. G. Shen, Crystallinity dependence of resistance switching in La0.7Ca0.3MnO3 films grown by pulsed laser deposition, J. Appl. Phys. 105, 063511 (2009).
39) D. S. Shang, J. R. Sun, L. Shi, Z. H. Wang, and B. G. Shen, Resistance dependence of photovoltaic effect in Au/SrTiO3:Nb(0.5 wt %) Schottky junctions, Appl. Phys. Lett. 93, 172119 (2008).
40) D. S. Shang, J. R. Sun, L. Shi, and B. G. Shen, Photoresponse of the Schottky junction Au/SrTiO3:Nb in different resistive states, Appl. Phys. Lett. 93, 102106 (2008).
41) D. S. Shang, L. D. Chen, Q. Wang, Z. H. Wu, W. Q. Zhang, and X. M. Li, Reversible multilevel resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures, J. Mater. Res. 23, 302-307 (2008). (Outstanding Symposium Paper)
42) D. S. Shang, L. D. Chen, Q. Wang, Z. H. Wu, W. Q. Zhang, and X. M. Li, Asymmetric fatigue and its endurance improvement in resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures, J. Phys. D: Appl. Phys. 40, 5373-5376 (2007).
43) D. S. Shang, L. D. Chen, Q. Wang, W. Q. Zhang, Z. H. Wu, and X. M. Li, Temperature dependence of current-voltage characteristics of Ag-La0.7Ca0.3MnO3-Pt heterostructures, Appl. Phys. Lett. 89, 172102 (2006).
44) D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and W. Q. Zhang, Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures, Phys. Rev. B 73, 245427 (2006).
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