Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer--中国科学院微电子研究所

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论文题目:	Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer
论文题目英文:
作者:	Jia, Rui; Kasai, Seiya; Wang, Qing; Long, Shi Bing; Niu, Jie Bin; Li, Zhi Gang; Liu, Ming
论文出处:
刊物名称:	Appl. Phys. Lett.
年:	2007
卷:	90
期:
页:	132124
联系作者:	Jia, Rui
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备注:	Keywords: gallium arsenide, III-V semiconductors, aluminium compounds, silicon, elemental semiconductors, semiconductor quantum wires, insulated gate field effect transistors, passivation, Fermi level