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论文题目: | Low-Cost and Highly Manufacturable Strained-SiChannel Technique for Strong Hole MobilityEnhancement on 35-nm Gate Length pMOSFETs |
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作者: | Qiuxia Xu, SeniorMember,IEEE, Xiaofeng Duan, Haihua Liu, Zhengsheng Han, and Tianchun Ye |
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刊物名称: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
年: | 2007 |
卷: | 54 |
期: | 6 |
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联系作者: | Qiuxia Xu |
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科研产出