| 论文编号: | 172511O120100082 |
| 第一作者所在部门: | 研究生15,十一室 |
| 论文题目: | Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAs |
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| 作者: | 黄杰 |
| 论文出处: | EI收录 |
| 刊物名称: | 半导体学报 |
| 年: | 2010 |
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| 影响因子: | 0.6 |
| 摘要: | A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In0:53Ga0:47As/In0:52Al0:48As InP-based HEMT, of which the material structure is successfully designed and optimized by our group. A 980 nm ultra-wide T-gate head, which is nearly as wide as 8 times the gatefoot (120 nm), is successfully obtained, and the excellent T-gate profile greatly reduces the parasitic resistance and capacitance effect and effectively enhances the RF performances. These fabricated devices demonstrate excellent DC and RF performances such as a maximum current gain frequency of 190 GHz and a unilateral power-gain gain frequency of 146 GHz. |
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