| 论文编号: | 172511O120100081 |
| 第一作者所在部门: | 研究生15,十一室 |
| 论文题目: | 120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT |
| 论文题目英文: | |
| 作者: | 黄杰 |
| 论文出处: | EI收录 |
| 刊物名称: | 半导体学报 |
| 年: | 2010 |
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| 影响因子: | 0.6 |
| 摘要: | 120 nm gate-length In0:7Ga0:3As/In0:52Al0:48As InP-based high electron mobility transitions (HEMTs) are fabricated by a new T-shaped gate electron beam lithograph (EBL) technology, which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack. These devices also demonstrate excellent DC and RF characteristics: the transconductance, maximum saturation drain-to-source current, threshold voltage, maximum current gain frequency, and maximum power-gain cutoff frequency of InGaAs/InAlAs HEMTs is 520 mS/mm, 446 mA/mm, –1.0 V, 141 GHz and 120 GHz, respectively. The material structure and all the device fabrication technology in this work were developed by our group. |
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