| 论文编号: | 172511O120100080 |
| 第一作者所在部门: | 研究生15,十一室 |
| 论文题目: | InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate |
| 论文题目英文: | |
| 作者: | 黄杰 |
| 论文出处: | SCI收录 |
| 刊物名称: | Chinese Physics Letters |
| 年: | 2010 |
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| 影响因子: | 1.135 |
| 摘要: | A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph (EBL) technology is successfully developed and used to fabricate the 150nm gate-length In0.7Ga0.3As/In0.52Al0.48As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T-gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics: the transconductance ？？？？, maximum saturation drain-to-source current ？？DSS, threshold voltage ？？？？ , maximum current gain frequency derived from ？21, maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power-gain of metamorphic InGaAs/InAlAs high electron mobility transistors (HEMTs) are 470 mS/mm, 560mA/mm, ？1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications. |
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