| 论文编号: | 172511O120100107 |
| 第一作者所在部门: | 研究生5,三室一组 |
| 论文题目: | 低功耗、高均匀性的基于Cu纳米晶插层的氧化锆基阻变存储器 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | SCI收录 |
| 刊物名称: | IEEE Electron Device Letters |
| 年: | 2010 |
| 卷: | 31 |
| 期: | 11 |
| 页: | 1299-1231 |
| 联系作者: | |
| 收录类别: | |
| 影响因子: | 2.605 |
| 摘要: | In this letter, the insertion of a Cu nanocrystal (NC) layer between the Pt electrode and ZrO2 film is proposed as an effective method to improve resistive switching properties in the ZrO2-based resistive switching memory. This Cu/ZrO2:Cu/Cu NC/Pt memory exhibits asymmetric nonpolar resistive switching behavior, low operating voltage (< 1.2 V), low Reset current (< 50 μA), and high uniformity of resistance switching. The switching mechanism is believed to be related with the formation and rupture of conductive filament. The NC-induced electrical field enhancement has the benefit to accelerate and control the CF formation process, thus leading to low-switching threshold voltage and high uniformity. |
| 英文摘要: | |
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