| 论文编号: | 172511O120100113 |
| 第一作者所在部门: | 研究生5（三室） |
| 论文题目: | 抗辐照的电阻转变存储器 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | SCI收录 |
| 刊物名称: | IEEE ELECTRON DEVICE LETTERS |
| 年: | 2010 |
| 卷: | 31 |
| 期: | 12 |
| 页: | 1470-1472 |
| 联系作者: | |
| 收录类别: | |
| 影响因子: | 2.605 |
| 摘要: | In this letter, the resistive random access memory (RRAM) with metal-insulator-metal (MIM) structure is investigated for the first time under radiation conditions. The fabricated Cu-doped HfO2 based RRAM devices are found to have immunity from 60Co γ ray of various dose ranges. The basic RRAM parameters such as high-resistance-state (HRS), low-resistance-state (LRS), SET/RESET voltages, operation speed and endurance have nearly no degradation after 60Co γ ray treatment with a total dose as high as 3.6×105 rad (Si). Furthermore, the retention characteristic of 105 seconds is also achieved during radiation. The highly stable characteristics of Cu-doped HfO2 based RRAM devices under radiation provide RRAM a great potential for aerospace and nuclear applications. |
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