| 论文编号: | 172511O120100112 |
| 第一作者所在部门: | 研究生5,三室一组 |
| 论文题目: | 基于ZrO2电阻转变存储器的多值效应 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | EI收录 |
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| 年: | 2010 |
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| 影响因子: | 0 |
| 摘要: | 1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor’s gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state. |
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| 备注: | 国际固态和集成电路技术会议 |
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