| 论文编号: | 172511O120100119 |
| 第一作者所在部门: | 研究生5（三室） |
| 论文题目: | 应用于非易失性存储器件的Cu/Cu:HfO2/Pt的双稳态电阻转变 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | EI收录 |
| 刊物名称: | |
| 年: | 2010 |
| 卷: | |
| 期: | |
| 页: | |
| 联系作者: | |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching based on the temperature test. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | International Conference on Solid-State and Integrated Circuit Technology |
科研产出