| 论文编号: | 172511O120100142 |
| 第一作者所在部门: | 一室一组 |
| 论文题目: | 部分耗尽绝缘体上硅低势垒体接触BUSFET改良后的辐照响应 |
| 论文题目英文: | |
| 作者: | 毕津顺 |
| 论文出处: | EI收录 |
| 刊物名称: | International Workshop on Junction Technology |
| 年: | 2010 |
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| 影响因子: | 0.284 |
| 摘要: | Partially Depleted Silicon-On-Insulator (PDSOI) Low Barrier Body Contact (LBBC) Body Under Source FET (BUSFET) is proposed by using ISE TCAD 2D process and device simulation. The difference between LBBC BUSFET and normal BUSFET is given. LBBC BUSFET shows improved resistance to radiation over normal BUSFET, thanks to lower body contact resistance and reduced junction barrier height. PDSOI LBBC BUSFET is more suitable for radiation hard applications. |
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