| 论文编号: | 172511O120100147 |
| 第一作者所在部门: | 一室一组 |
| 论文题目: | 一种部分耗尽绝缘体上硅CMOS晶体管单粒子翻转的基于器件物理的仿真模型 |
| 论文题目英文: | |
| 作者: | 韩郑生 |
| 论文出处: | EI收录 |
| 刊物名称: | International Conference on Solid-State and Integrated Circuit Technology |
| 年: | 2010 |
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| 影响因子: | 0.284 |
| 摘要: | An ion vertical striking on SOI CMOS transistor sensitive region creates an obvious large current resulting in upset of output node. Since parasitic BJT act, the single-event effect (SEE) is enhanced. In order to evaluate this effects, it is desirable to calculate critical charge (Qcrit，charge collected by the drain during the entire SEE) and the duration of output voltage pulse. With ISE TCAD, two-dimensional simulation is used to determine these parameters, assist to examine and analyze electrical behavior. According to the physical mechanism, a device-basic SPICE model is proposed as an engineering approach to predict the single-event upsets (SEU) of integrated circuit. This paper describes explicitly on the parameter extraction and calculation, and shows reasonable agreement with 2-D simulated results. |
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