| 论文编号: | 172511O120100177 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 金属栅/高k栅介质/超薄SiO2/Si结构 |
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| 作者: | 黄安平 |
| 论文出处: | SCI收录 |
| 刊物名称: | Applyied Physics |
| 年: | 2010 |
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| 影响因子: | 3.554 |
| 摘要: | The origin of the flat band voltage roll-off (VFB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2 / Si interface on the VFB sharp roll-off is proposed. The VFB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the VFB |
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