| 论文编号: | 172511O120100175 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 高k栅介质/金属栅结构MOS器件中的 |
| 论文题目英文: | |
| 作者: | 王文武 |
| 论文出处: | SCI收录 |
| 刊物名称: | Applyied Physics |
| 年: | 2010 |
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| 影响因子: | 3.554 |
| 摘要: | A physical model on dipole formation at high-k？SiO2 interface is proposed to study possible mechanism of flatband voltage (VFB) shift in metal-oxide-semiconductor device with high-k/metal gate structure. Dielectric contact induced gap states (DCIGS) on high-k or SiO2 side induced by high-k and SiO2 contact are assigned to dominant origin of dipole formation. DCIGS induced interface dipole is considered to cause VFB shift through charge transfer effect. Based on the proposed model, directions of dipoles at several high-k？SiO2 interfaces are predicted, and magnitudes of dipoles are approximately calculated. Both directions and magnitudes are in agreement with the reported results. |
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