论文编号: 172511O120100174
第一作者所在部门: 三室一组
论文题目: 改进型高速低功耗负电位电平位移电路
论文题目英文:
作者: 刘明
论文出处: EI收录
刊物名称:
: 2010
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影响因子: 0
摘要: An improved negative level shifter with high speed and low power consumption is presented. To reduce the switching delay and power consumption, a boost circuit is designed and additional charging current paths are introduced in the improved level shifter. The circuit has been designed in 130nm triple-well standard CMOS technology with a nominal power supply VDD of 1.5V and a negative voltage of -4.5V. Simulation results show that the switching delay and power consumption have been significantly reduced by roughly 78% and 51%, respectively,compared with the conventional negative level shifter.
英文摘要:
外单位作者单位:
备注: International Conference on Solid-State and Integrated Circuit Technology