| 论文编号: | 172511O120100180 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | Source/Drain Technologies for the scaling of nanoscale CMOS device |
| 论文题目英文: | |
| 作者: | 宋毅 |
| 论文出处: | SCI收录 |
| 刊物名称: | Solid State Sciences |
| 年: | 2010 |
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| 影响因子: | 1.675 |
| 摘要: | Continuous shrinking CMOS device into 21 nm technology node is facing fundamental challenges. The International Technology Roadmap for Semiconductors (ITRS) forecasts specific requirements in order to realize acceptable CMOS performance for the semiconductor industry. The innovations of various source/drain technologies are considered to be indispensable for the continuous scaling of CMOS device due to the effective suppression of short-channel effects and high performance. One of the key points is to realize ultra-shallow junction with highly steep concentration profile and low resistivity source/drain. There are many innovative solutions including advanced doping technologies and annealing technologies for ultra-shallow junction formation. Additionally, new source/drain structures such as raised source/drain and Schottky barrier metal source/drain also serve as the important options. The state-of-the-arts of these new technologies are extensively discussed from the view point of technical innovation and performance gain. Source/drain technologies are promising and active areas of device research down to 21 nm technology node and even beyond. |
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