| 论文编号: | 172511O120100178 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 金属栅/高k栅介质界面处由于金属栅的电子态密度造成的费米能级定扎效应研究 |
| 论文题目英文: | |
| 作者: | 黄安平 |
| 论文出处: | SCI收录 |
| 刊物名称: | IEEE Electron device letters |
| 年: | 2010 |
| 卷: | |
| 期: | |
| 页: | |
| 联系作者: | |
| 收录类别: | |
| 影响因子: | 2.605 |
| 摘要: | The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/ high-k stack is also governed by the electron state density of the metal. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | |
科研产出