| 论文编号: | 172511O120100187 |
| 第一作者所在部门: | 三室 |
| 论文题目: | 基于氧化钛的低成本忆阻器器件 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | EI收录 |
| 刊物名称: | International Conference on Solid-State and Integrated Circuit Technology |
| 年: | 2010 |
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| 影响因子: | 0 |
| 摘要: | Memristor has been extensively investigated as the fourth fundamental circuit element. A common material in fabricating memristors is titanium oxide. The growth of titanium oxide has so far been focused on atomic layer deposition or sputtering, which is expensive. In this paper, a low-cost memristor device is demonstrated based on titanium oxide, grown by the thermal oxidation of deposited Ti film with a low-temperature process. Both the high and low resistance states of the device can be continually modulated by the successive voltage sweeps. Moreover, multilevel storage can be achieved in the device by using various maximum voltages during the set process. |
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| 备注: | International Conference on Solid-State and Integrated Circuit Technology |
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