| 论文编号: | 172511O120100186 |
| 第一作者所在部门: | 三室 |
| 论文题目: | Cu/WO3/Pt器件的非挥发多级存储特性 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | SCI收录 |
| 刊物名称: | Physica Status Solidi - Rapid Research Letters |
| 年: | 2010 |
| 卷: | 4 |
| 期: | 5 |
| 页: | 124-126 |
| 联系作者: | |
| 收录类别: | |
| 影响因子: | 2.56 |
| 摘要: | The multilevel storage properties of Cu/WO3/Pt structure de- vices are demonstrated. By the application of suitable com- pliance current values, the Cu/WO3/Pt memory device can be driven to various resistance states. Some distinguishable states are reproducible over 100 dc switching cycles, and such states remain stable over 104 seconds. The multilevel memory effect in the Cu/WO3/Pt device can be attributed to the com- bination of the radial growth of filaments and the formation of more conductive filaments when applying a higher compli- ance current during the set process. |
| 英文摘要: | |
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