| 论文编号: | 172511O120100185 |
| 第一作者所在部门: | 三室 |
| 论文题目: | Au/ZrO2/Ag结构器件电阻转变特性在低压非挥发性存储器中的应用 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | SCI收录 |
| 刊物名称: | IEEE Electron Device Letters |
| 年: | 2010 |
| 卷: | 31 |
| 期: | 2 |
| 页: | 117-119 |
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| 影响因子: | 2.605 |
| 摘要: | The reliable resistive switching properties of Au/ZrO2/Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 104), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 ？C). Moreover, the bene？ts of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications. |
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