| 论文编号: | 172511O120100226 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | Mobility Enhancement Technology for the Scaling of CMOS Device: Overview and Status |
| 论文题目英文: | |
| 作者: | 宋毅 |
| 论文出处: | SCI收录 |
| 刊物名称: | Journal of Electronic Materials |
| 年: | 2010 |
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| 影响因子: | 1.428 |
| 摘要: | Aggressive scaling down of CMOS device size into 21 nm technology node and beyond is facing major challenges. The innovations of various |
| 英文摘要: | |
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