| 论文编号: | 172511O120100248 |
| 第一作者所在部门: | 三室一组 |
| 论文题目: | 基于MAZOS结构的高性能非挥发存储器应用 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | SCI收录 |
| 刊物名称: | Semiconductor Science and Technology |
| 年: | 2010 |
| 卷: | |
| 期: | 25 |
| 页: | (055013)1-4 |
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| 收录类别: | |
| 影响因子: | 1.253 |
| 摘要: | In this paper, we report a MAZOS structure with a ZrO2 charge trapping layer for nonvolatile memory application. The superiority of this device over the traditional MANOS devices is much better data retention and enhanced program/erase efficiency. The MAZOS device exhibits excellent memory characteristics, including a large memory window of 7.1V under ±11V capacitance-voltage sweep, and a greatly improved data retention along with good endurance. |
| 英文摘要: | |
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