| 论文编号: | 172511O120100275 |
| 第一作者所在部门: | 三室一组 |
| 论文题目: | WTi纳米晶非挥发性存储器 |
| 作者: | 刘明 |
| 论文出处: | SCI收录 |
| 刊物名称: | Nanotechnology |
| 年: | 2010 |
| 期: | 21 |
| 影响因子: | 3.137 |
| 摘要: | Well isolated Ti0.46W0.54 NCs were embedded in the gate dielectricstack of SiO2/Al2O3. A MOS capacitor was fabricated toinvestigate its application in a non-volatile memory device. The retention characteristic of this MOS capacitor was demonstrated by a 0.5 V memory window after 104 s of elapsed time at room temperature.The endurance characteristic was demonstrated by a program/erase cycling test. |
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