| 论文编号: | 172511O120100274 |
| 第一作者所在部门: | 二室四组 |
| 论文题目: | 由SOI CMOS 工艺的芯片MOS晶体管的寄生结构引起的 |
| 论文题目英文: | |
| 作者: | 王剑 |
| 论文出处: | EI收录 |
| 刊物名称: | ICSICT2010 |
| 年: | 2010 |
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| 影响因子: | 0 |
| 摘要: | The paper describes the parasitic structures of MOS transistors in SOI CMOS ICs at first. Then the influences of the parasitic structures on single particles radiation effect of MOS transistors in SOI CMOS ICs are presented. Finally the hardness methods of single event effects resulted by the parasitic structures of MOS transistors are given and the estimate about their excellence is made out. |
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| 备注: | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology |
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