| 论文编号: | 172511O120100322 |
| 第一作者所在部门: | 八室一组 |
| 论文题目: | 多晶栅过刻蚀机理的研究 |
| 论文题目英文: | |
| 作者: | 张庆钊 |
| 论文出处: | EI收录 |
| 刊物名称: | 中国国际半导体技术大会论文集 |
| 年: | 2010 |
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| 影响因子: | 0 |
| 摘要: | The over-etch mechanism in poly-gate etching is investigated. The relationships between the final poly-gate profile and the over-etch process parameters are presented. The final profile of poly-gate is more or less affected by nearly every parameter in the over-etch process steps. In this study, the notch and footing issue of poly-gate profile has also been investigated to find that the profile very sensitive to the oxygen flow and the temperature of electrostatic chuck (ESC). |
| 英文摘要: | |
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| 备注: | 中国国际半导体技术大会 |
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