| 论文编号: | 172511O120110297 |
| 第一作者所在部门: | 六室 |
| 论文题目: | GaN HEMT基宽带平衡功率放大器设计 |
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| 作者: | 冷永清 |
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| 年: | 2012-04-06 |
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| 联系作者: | 冷永清 |
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| 摘要: | In this paper, the design and implementation of a broadband balanced power amplifier using a GaN HEMT transistor are presented. Two Lange couplers are used for a balanced PA configuration, and two multi-section matching networks are used to improve the bandwidth of PA. In order to simplify the matching network, the output impedance is matched to an intermediate impedance. By biasing the amplifier at =28V, =110mA, the measurement results show 12-13dB linear gain and 56%-65% drain efficiency in the 1.5-3.5GHz frequency range. Moreover, an output power higher than 8W is maintained over the band. For a 3.1GHz pulse wave signal with 10% duty cycle and 300μs pulse width, we obtain an output power of 39.4dBm(8.7W) and a peak drain efficiency of 60% . |
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