| 论文编号: | 172511O120110206 |
| 第一作者所在部门: | 三室一组 |
| 论文题目: | 一种新型2- T结构使用硅纳米点嵌入式应用的存储器 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | |
| 刊物名称: | JournalofSemiconductors |
| 年: | 2011-12-01 |
| 卷: | 32 |
| 期: | 12 |
| 页: | |
| 联系作者: | 刘明 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | Performance and reliability of a 2 transistor (2T) Si nanocrystal (NC) nonvolatile memory (NVM) are investigated.Agoodperformanceofthememorycellhasbeenachieved,includingafastprogram/erase(P/E)speed underlowvoltages,anexcellentdataretention(maintainingfor10years)andgoodendurancewithalessthreshold voltage shift of less than 10% after 104P/E cycles. The data show that the device has strong potential for future embedded NVM applications. |
| 英文摘要: | |
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