| 论文编号: | 172511O120120238 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | |
| 论文题目英文: | |
| 作者: | 葛霁 |
| 论文出处: | |
| 刊物名称: | 中国物理B |
| 年: | 2012 |
| 卷: | 21 |
| 期: | 5 |
| 页: | 058501-1 |
| 联系作者: | 葛霁 |
| 收录类别: | |
| 影响因子: | 2.318 |
| 摘要: | A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors (DHBTs) based on hydrodynamic simulation is developed. The model is based on the hydrodynamic equation, which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector. In addition, the model accounts for several physical effects such as bandgap narrowing, variable effective mass, and doping-dependent mobility at high fields. Good agreement between the measured and simulated values of cutoff frequency, ft, and maximum oscillation frequency, fmax, are achieved for lateral and vertical device scalings. It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs. |
| 英文摘要: | |
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| 备注: | SCI收录 |
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