| 论文编号: | 172511O120120165 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | 一款输出功率24瓦的Ku波段GaN基功率放大器 |
| 论文题目英文: | |
| 作者: | 罗卫军 |
| 论文出处: | |
| 刊物名称: | Microelectronics Journal |
| 年: | 2012 |
| 卷: | |
| 期: | 43 |
| 页: | 569 |
| 联系作者: | 罗卫军 |
| 收录类别: | |
| 影响因子: | 1.3374 |
| 摘要: | A Ku-band power amplifier is successfully developed with a single chip 4.8 mm AlGaN/GaN high electron mobility transistors (HEMTs). The AlGaN/GaN HEMTs device, achieved by E-beam lithography l-gate process, exhibited a gate-drain reverse breakdown voltage of larger than 100 V, a cutoff frequency of fT？30 GHz and a maximum available gain of 13 dB at 14 GHz. The pulsed condition (100 ms pulse period and 10% duty cycle) was used to test the power characteristic of the power amplifier. At the frequency of 13.9 GHz, the developed GaN HEMTs power amplifier delivers a 43.8 dBm (24 W) saturated output power with 9.1 dB linear gain and 34.6% maximum power-added efficiency (PAE) with a drain voltage of 30 V. To our best knowledge, it is the state-of-the-art result ever reported for internal-matched 4.8 mm single chip GaN HEMTs power amplifier at Ku-band. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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