| 论文编号: | 172511O120120163 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | 关于Ge-MOSFETs界面钝化的广泛研究-控制界面层以实现高性能器件- |
| 论文题目英文: | |
| 作者: | 刘洪刚 |
| 论文出处: | |
| 刊物名称: | Proceedings of IEEE International Conference on Solid-State 2012 |
| 年: | 2012 |
| 卷: | |
| 期: | 1 |
| 页: | S35-03-1 |
| 联系作者: | 刘洪刚 |
| 收录类别: | |
| 影响因子: | 0.919 |
| 摘要: | Ge is a promising candidate to replace Si for advanced MOSFET because of its high mobility. Main obstacles to obtain a high-quality high-k/Ge interface for high performance Ge-MOSFETs are: i) thermal instability at the high-k/Ge interface; ii) high-k/Ge interface is highly defective; iii) leakage current through the high-k/Ge stack is high. Therefore, high-k/Ge interface needs to be passivated. In this contribution, various passivation ways including N*-, HCl-, (NH4)2S- treatment, and epitaxial BeO layer insertion were investigated. The impacts of these passivation ways in stability enhancement, defects reduction, and gate leakage suppression were discussed. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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