| 论文编号: | 172511O120120139 |
| 第一作者所在部门: | 二室四组 |
| 论文题目: | 埋氧注氮改性的商用SOI材料的总剂量辐射响应 |
| 论文题目英文: | |
| 作者: | 于芳 |
| 论文出处: | |
| 刊物名称: | Chinese Physics B |
| 年: | 2012 |
| 卷: | 21 |
| 期: | 11 |
| 页: | 116104-1 |
| 联系作者: | 于芳 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | Nitrogen ions of various doses are implanted into the buried oxide (BOX) of commercial silicon-on-insulator (SOI) materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance–voltage (C–V ) technique after irradiation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C–V data, secondary ion mass spectrometry (SIMS), and Fourier transform infrared (FTIR) spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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