| 论文编号: | 172511O120120130 |
| 第一作者所在部门: | 四室 |
| 论文题目: | Ku波段内匹配高功率且PAE超过30%的GaN HEMT放大器 |
| 论文题目英文: | |
| 作者: | 刘新宇 |
| 论文出处: | |
| 刊物名称: | Journal of Semiconductors |
| 年: | 2012 |
| 卷: | 33 |
| 期: | 1 |
| 页: | 014003-1 |
| 联系作者: | 刘新宇 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | We report a high power Ku band internally matched power amplifier (IMPA) with high power added efficiency (PAE) using 0.3 μm AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC substrate. The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic (3D-EM) simulator, the amplifier demonstrates a maximum output power of 42.5 dBm (17.8 W), PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vds = 30 V and Vgs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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