| 论文编号: | 172511O120120112 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 熊文娟 |
| 论文出处: | |
| 刊物名称: | CSTIC 2012 |
| 年: | 2012 |
| 卷: | |
| 期: | 44 |
| 页: | 153 |
| 联系作者: | 熊文娟 |
| 收录类别: | |
| 影响因子: | 2.318 |
| 摘要: | In order to improve the HKMG interface states density and electrical characteristics, four different interface layers have been studied in this paper. They are 7A？ thickness of SiO2 produced by rapid thermal annealing process at 1000°C, 4A？ thickness of SiO2 produced by rapid thermal annealing process at 700°C, 10A？ thickness of silicon nitride produced by LPCVD process at 620°C, and 20A？ thickness of SiO2 produced by traditional horizontal furnace process at 830°C. It was found that there were two samples, the interface layers of 7A？ SiO2 and 10A？ silicon nitride, having excellent interface state density (1.5~1.7×1011cm-2ev-1) and gate leakage (3.1~3.5×10-7A). Considering the thinner equivalent oxide thickness (Eot), we choose 10A？ silicon nitride as the best one |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | 其他国内刊物 |
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