| 论文编号: | 172511O120120323 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | |
| 论文题目英文: | |
| 作者: | 童小东 |
| 论文出处: | |
| 刊物名称: | ECS Transactions |
| 年: | 2012 |
| 卷: | |
| 期: | 44 |
| 页: | 99 |
| 联系作者: | 童小东 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | A new SRAM structure using 2-port PNPN diodes as memory cells is proposed in this article. The electrical characteristics of this memory cell is analyzed and then optimized to meet design requirements. Device fabrication using a simple process flow is conducted. The experimental result and further mixed-mode simulations proved that this diode is feasible for SRAM circuit in advanced VLSI applications. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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