| 论文编号: | 172511O120120090 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 适用于先进CMOS应变沟道工程的超高压应力类金刚石薄膜制备 |
| 论文题目英文: | |
| 作者: | 马小龙 |
| 论文出处: | |
| 刊物名称: | MRS Proceedings |
| 年: | 2012 |
| 卷: | 44 |
| 期: | 2012 |
| 页: | 1427 |
| 联系作者: | 马小龙 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | Diamond-like carbon (DLC) films as a new strain-capping material with compressive stress up to 12GPa for strained silicon technology were fabricated by filtered cathodic vacuum arc (FCVA) deposition system. The films’ compositions and bonding structures were characterized using multi-wavelength Raman spectroscopy. The relationship between intrinsic stress and G peak dispersion of the films’ Raman spectra were discussed. The results showed that the bias voltage applied to substrate during deposition determines films’ sp3 bonding content and intrinsic stress. Process compatibility of the DLC films with standard CMOS technology was confirmed by using WDXRF measurement. Also diffusion behavior of carbon atoms in DLC films with copper and silicon was studied with a Cu(200nm)/DLC(40nm)/silicon multilayer structure annealed at 500℃ in N2 atmosphere for an hour. At last, stress induced on silicon surface by DLC strips was characterized using surface sensitive UV-Raman spectroscopy. The results showed that DLC films with extremely high compressive stress have potential application in future CMOS strain engineering. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
科研产出