| 论文编号: | 172511O120120126 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | |
| 论文题目英文: | |
| 作者: | 白云 |
| 论文出处: | |
| 刊物名称: | Journal of ELECTRONIC MATERIALS |
| 年: | 2012 |
| 卷: | 41 |
| 期: | 11 |
| 页: | 3021 |
| 联系作者: | 白云 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | The effect of annealing on the characteristics of Pd Au contacts to p-type GaN Al0.45Ga0.55N was investigated. The electrical characteristics of Pd Au contacts and a p-GaN AlGaN sample were measured after annealing at different temperatures from 550 C to 850 C. Changes in the surface electrical characteristic of p-GaN/AlGaN material were observed after each annealing step. It is indicated that the surface electrical characteristic of p-GaN AlGaN material plays an important role in the current transport through Pd Au pads. A possible reason for those changes is impurity contamination, most likely oxygen and carbon contamination introduced from processing. The microstructure of Pd on p-GaN AlGaN was investigated by glancing-incidence x-ray diffraction (GXRD). The results of GXRD show that the AlPd2 and GaPd2 phases were formed at the interface after annealing, and the formation of these phases could be effective for forming ohmic contacts on p-GaN AlGaN. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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