| 论文编号: | 172511O120120084 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 硅基不同晶向上电子迁移率的研究 |
| 论文题目英文: | |
| 作者: | 蒋葳 |
| 论文出处: | |
| 刊物名称: | ICSICT 2012 |
| 年: | 2012 |
| 卷: | |
| 期: | 2012 |
| 页: | P1_01 |
| 联系作者: | 蒋葳 |
| 收录类别: | |
| 影响因子: | 3.844 |
| 摘要: | nMOSFETs with different channel directions are fabricated on (100), (110), (111) and (112) silicon substrates, in order to study electron mobility on (112) substrates. Electron mobility is extracted and compared between different crystalline orientations. Results show that electron mobility on (112) substrates is higher than that on (110) substrates but lower than that on (100) substrates. Electron mobility on (112) substrates is channel orientation depended, which is different from that on (111) substrates. Electron mobility on (112) substrates is close to that on (111) substrates with current flow along <110> direction, and is close to that on (110) substrates with current flow along <111> direction. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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