| 论文编号: | 172511O120120056 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | TiN/HfO2/SiO2/Si栅结构的TiN/HfO2界面的能带研究 |
| 论文题目英文: | |
| 作者: | 王晓磊 |
| 论文出处: | |
| 刊物名称: | APPL. PHYS. LETT. |
| 年: | 2012 |
| 卷: | |
| 期: | 100 |
| 页: | 102906 |
| 联系作者: | 王晓磊 |
| 收录类别: | |
| 影响因子: | 0.2184 |
| 摘要: | Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is demonstrated based on band alignment of entire gate stack. Dependence of p-SBH on HfO2 thickness is interpreted and contributed to fixed charges in gate stack, interfacial gap state charges at HfO2/SiO2 interface, and space charges in Si substrate. Electrical measurements of capacitor structures further support XPS results and corresponding explanation. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | 其他国外刊物 |
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