| 论文编号: | 172511O120120007 |
| 第一作者所在部门: | 三室一组 |
| 论文题目: | 高温氧气退火对MANOS型存储器件阻挡层及界面层的影响 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | |
| 刊物名称: | J. Phys. D: Appl. Phys. |
| 年: | 2012 |
| 卷: | 45 |
| 期: | |
| 页: | 185103 |
| 联系作者: | 刘明 |
| 收录类别: | |
| 影响因子: | 3.82 |
| 摘要: | In this paper, we have investigated the effects of O2 post-deposition annealing (PDA) on metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices. Compared with low-energy plasma oxygen pre-treatment and the N2 PDA process, the O2 PDA process can lead to a significant retention improvement. The improvement is attributed to the removal of oxygen vacancies in Al2O3 block oxide and the oxygen incorporation at the Si3N4/Al2O3 interfacial layer which is determined by x-ray photoelectron spectroscopy (XPS) depth profiling and electrical characteristics. Metal/Al2O3/SiO2/Si (MAOS) devices are also studied to confirm these effects. As a result, we consider that the O2 PDA process is a crucial process for future MANOS-type memory devices. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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