| 论文编号: | 172511O120120079 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | Interfacial Elastic Dipoles: A New EOT Shifting Mechanism in HKMG Devices |
| 论文题目英文: | |
| 作者: | 梁擎擎 |
| 论文出处: | |
| 刊物名称: | Electron Decive Letters |
| 年: | 2012 |
| 卷: | |
| 期: | 6 |
| 页: | 884 |
| 联系作者: | 梁擎擎 |
| 收录类别: | |
| 影响因子: | 2.849 |
| 摘要: | A new effective-oxide-thickness (EOT) shifting mechanism caused by the interfacial elastic dipoles is analyzed. The EOT can shift without changing the physical thickness of each dielectric layer. This phenomenon is first observed in the experiments of high-k metal-gate device optimization. Detailed studies and ab initio simulations show that this dipole-EOT correlation generally exists in any dielectric interfaces and should be carefully scrutinized in process development. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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