| 论文编号: | 172511O120130209 |
| 第一作者所在部门: | |
| 论文题目: | Effect of GeOx Interfacial Layer Formed by Ozone Oxidation Process on Ge MOS devices |
| 论文题目英文: | |
| 作者: | 刘洪刚 |
| 论文出处: | |
| 刊物名称: | Extended Abstracts of 2013 International Workshop on Dielectric Thin Films For future electron devices: Science and Technology |
| 年: | 2013-11-08 |
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| 期: | 2013 |
| 页: | 33 |
| 联系作者: | 刘洪刚 |
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| 英文摘要: | |
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科研产出