| 论文编号: | 172511O120130195 |
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| 作者: | 许高博 |
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| 刊物名称: | 2013 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC'13)论文集 |
| 年: | 2013-06-12 |
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| 期: | 1 |
| 页: | 1 |
| 联系作者: | 许高博 |
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| 摘要: | HfSiON gate dielectric with equivalent oxide thickness of 10？ was prepared by reactive sputtering. It exhibits good physical and electrical characteristics, including good thermal stability up to 900℃, high dielectric constant and low gate leakage current. It was integrated with TaN metal gate in a novel gate-last process flow to fabricate NMOSFET. In the process, poly-silicon was deposited on HfSiON gate dielectric as dummy gate and replaced by TaN metal gate after source/drain formation. Because of the metal gate formation after the ionimplant doping activation at high temperature, HfSiON/TaN NMOSFET with good driving ability and excellent sub-threshold characteristics was fabricated. |
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