| 论文编号: | 172511O120130154 |
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| 作者: | 王文武 |
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| 刊物名称: | Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the |
| 年: | 2013-07-15 |
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| 期: | 1 |
| 页: | 666 |
| 联系作者: | 王文武 |
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| 摘要: | In this paper, the Hot-Carrier (HC) degradation characteristics and mechanisms of nMOSFETs with high-k/metal gate (HK/MG) structure are systematically investigated. The Idsat shift under different Vd states obeys power-law of Vg stress time, and the exponent of Vg stress time shifts from 0.5~0.7 at low stress to 0.2~0.3 at high stress, which is believed to be induced by different trap activities. There are two transitions in the curve of time to fail (TTF) and Vg stress, the 1st valley point is resulted from impact ionization, and the 2nd transition is attributed to the dominant roles exchange of the interface trap (Nit) and bulk trap (Not) in dielectric in degradation. |
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