| 论文编号: | 172511O120130150 |
| 第一作者所在部门: | |
| 论文题目: | 石墨烯背栅器件在空气中稳定性的研究 |
| 论文题目英文: | |
| 作者: | 粟雅娟 |
| 论文出处: | |
| 刊物名称: | 半导体学报 |
| 年: | 2013-08-21 |
| 卷: | 34 |
| 期: | 8 |
| 页: | 84004 |
| 联系作者: | 粟雅娟 |
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| 影响因子: | |
| 摘要: | The stability of a graphene field effect transistor (GFET) is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization. In this work, a back-gate GFET has been fabricated and characterized, which is compatible with the CMOS process. The stability of a GFET in air has been studied and it is found that a GFET's electrical performance dramatically changes when exposed to air. The hysteresis characteristic of a GFET depending on time has been observed and analyzed systematically. Hysteresis behavior is reversed at room temperature with the Dirac point positive shifted when the GFET is exposed to air after annealing. |
| 英文摘要: | |
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