| 论文编号: | 172511O120130115 |
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| 论文题目: | NA |
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| 作者: | 骆志炯 |
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| 刊物名称: | IEEE ELECTRON DEVICE LETTERS |
| 年: | 2013-07-23 |
| 卷: | |
| 期: | 34 |
| 页: | 927 |
| 联系作者: | 骆志炯 |
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| 摘要: | An effective interface engineering method is developed to improve performance of SrTiO3-based hetero-oxide transistors. HfO2/SrTiO3 hetero-oxide transistors made on argon ions bombarded SrTiO3 surfaces show eight times increase in drive currents and more than five times increase in mobility when compared with the un-bombarded HfO2/SrTiO3 transistors. The improvement is attributed to the Fermi-level shift as the results of the bombardment. These HfO2/SrTiO3-based nMOSFETs show field-effect electron mobility up to 4.2 cm2/Vs, which is among the best results ever reported. |
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