| 论文编号: | 172511O120130093 |
| 第一作者所在部门: | |
| 论文题目: | a-Si/WO3 双层结构的自整流阻变存储器 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | |
| 刊物名称: | IEEE Electron Device Letters |
| 年: | 2013-02-02 |
| 卷: | 2 |
| 期: | 34 |
| 页: | 229 |
| 联系作者: | 刘明 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the sneaking current issue in a crossbar structure. In this letter, we have successfully demonstrated a prototype device with inherent rectifying property with a-Si/WO3bilayer structure. After a forming process, the devices exhibit obvious rectifying property with forward/reverse current ratio of 102 at±0.75 V and excellent reproducibility. The formation of localized conductive filaments (CFs) in the WO3 layer and the corresponding CF/a-Si Schottky contact are suggested to explain the rectifying behavior. The results in this letter demonstrate a possible way to realize selector-free crossbar structure. |
| 英文摘要: | |
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