| 论文编号: | 172511O120130082 |
| 第一作者所在部门: | |
| 论文题目: | 有关利用400度PECVD方法制备的硅通孔介质膜的性质和电学特性研究 |
| 论文题目英文: | |
| 作者: | Meiying Su |
| 论文出处: | |
| 刊物名称: | thin solid films |
| 年: | 2013-11-13 |
| 卷: | 0 |
| 期: | 0 |
| 页: | in press |
| 联系作者: | Meiying Su |
| 收录类别: | |
| 影响因子: | |
| 摘要: | The dielectric via liner of through silicon vias was deposited at 400oC using a tetraethyl orthosilicate (TEOS) -based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance-Voltage measurements. The TEOS SiO2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. |
| 英文摘要: | |
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