| 论文编号: | 172511O120130045 |
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| 作者: | 申华军 |
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| 刊物名称: | chinese physics b |
| 年: | 2013-07-01 |
| 卷: | 22 |
| 期: | 7 |
| 页: | 078102 |
| 联系作者: | 申华军 |
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| 摘要: | High temperature annealing of atomic layer deposition (ALD) deposited Al2O3 on 4H-SiC in O2 atmosphere was studied with temperature range from 800 ℃ to 1000 ℃. It was observed that the surface morphology of Al2O3 films annealed at 800 and 900 ℃ was pretty good, while the surface of the sample annealed at 1000 ℃ became bumpy. Grazing Incidence X-ray diffraction (GIXRD) measurements demonstrated that the as-grown films were amorphous and begun to crystallize at 900 ℃. Furthermore, C-V measurements exhibited improved interface characterization after annealing, especially for samples annealed at 900 and 1000 ℃. It is indicated that high temperature annealing in O2 atmosphere could improve the interface of Al2O3/SiC and 900 ℃ annealing would be an optimum condition referring to surface morphology, dielectric qualities and interface states |
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