| 论文编号: | 172511O120130201 |
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| 作者: | 王文武 |
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| 刊物名称: | Applied physics letters |
| 年: | 2013-10-28 |
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| 期: | 18 |
| 页: | 3502 |
| 联系作者: | 王文武 |
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| 摘要: | In this paper, the drain induced barrier lowering (DIBL) variations in High-k/Metal gate n-channel metal–oxide–semiconductor field effect transistor under the normal and reverse channel hot carrier (CHC) stress are studied. It is found that DIBL decreases under normal CHC stress mode while increases under reverse CHC mode. The different DIBL variation under normal and reverse CHC stresses is proposed to be attributed to stress-induced charge trapping by cold carriers from the channel rather than hot carriers from the pinch off region, which can be explained by energy band bending theory. |
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